UPA2782GR Datasheet, Fet, NEC

UPA2782GR Features

  • Fet
  • Built a Schottky Barrier Diode
  • Low on-state resistance RDS(on)1 = 11 mΩ TYP. (VGS = 10 V, ID = 5.5 A) RDS(on)2 = 16 mΩ TYP. (VGS = 4.5 V, ID = 5.5 A) RDS(on)3 = 19 m

PDF File Details

Part number:

UPA2782GR

Manufacturer:

NEC

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69.43kb

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📄 Datasheet

Description:

Switching n- and p-channel power mos fet. The µPA2782GR is N-Channel Power MOSFET, which built a Schottky Barrier Diode inside. This product is designed for synchronous DC/DC

Datasheet Preview: UPA2782GR 📥 Download PDF (69.43kb)
Page 2 of UPA2782GR Page 3 of UPA2782GR

UPA2782GR Application

  • Applications of an NEC Electronics product depend on its quality grade, as in

TAGS

UPA2782GR
SWITCHING
AND
P-CHANNEL
POWER
MOS
FET
NEC

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Stock and price

Rochester Electronics LLC
UPA2782GR-E1-A - SWITCHINGN-CHAN
DigiKey
UPA2782GR-E1-A
0 In Stock
Qty : 170 units
Unit Price : $1.77
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