UPA2782GR SWITCHING N- AND P-CHANNEL POWER MOS FET

NEC

Description

DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA2782GR SWITCHING N-CHANNEL POWER MOS FET/SCHOTTKY BARRIER DIODE .
The µPA2782GR is N-Channel Power MOSFET, which built a Schottky Barrier Diode inside.

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Datasheet Specifications

Part number: UPA2782GR
Manufacturer: NEC
File Size: 69.43 KB
Datasheet: UPA2782GR_NEC.pdf
Description: SWITCHING N- AND P-CHANNEL POWER MOS FET

Features

* Built a Schottky Barrier Diode
* Low on-state resistance RDS(on)1 = 11 mΩ TYP. (VGS = 10 V, ID = 5.5 A) RDS(on)2 = 16 mΩ TYP. (VGS = 4.5 V, ID = 5.5 A) RDS(on)3 = 19 mΩ TYP. (VGS = 4.0 V, ID = 5.5 A)
* Low Ciss: Ciss = 660 pF TYP.
* Small and surface mount package (

Applications

* of an NEC Electronics product depend on its quality grade, as in

UPA2782GR Distributors

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UPA2782GR SWITCHING AND P-CHANNEL POWER MOS FET NEC

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