UPA2781GR Datasheet, Fet, NEC

UPA2781GR Features

• Fet
• Built a Schottky Barrier Diode
• Low on-state resistance RDS(on)1 = 7.6 mΩ TYP. (VGS = 10 V, ID = 7 A) RDS(on)2 = 11.3 mΩ TYP. (VGS = 4.5 V, ID = 7 A) RDS(on)3 = 12.9

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Part number:

UPA2781GR

Manufacturer:

NEC

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📄 Datasheet

Description:

Switching n- and p-channel power mos fet. The µPA2781GR is N-channel Power MOSFET, which built a Schottky Barrier Diode inside. This product is designed for synchronous DC/DC

UPA2781GR Application

• Applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Elect

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UPA2781GR

NEC

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