UPA2781GR SWITCHING N- AND P-CHANNEL POWER MOS FET

NEC

Description

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2781GR SWITCHING N-CHANNEL POWER MOS FET/SCHOTTKY BARRIER DIODE .
The µPA2781GR is N-channel Power MOSFET, which built a Schottky Barrier Diode inside.

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Datasheet Specifications

Part number: UPA2781GR
Manufacturer: NEC
File Size: 63.41 KB
Datasheet: UPA2781GR_NEC.pdf
Description: SWITCHING N- AND P-CHANNEL POWER MOS FET

Features

* Built a Schottky Barrier Diode
* Low on-state resistance RDS(on)1 = 7.6 mΩ TYP. (VGS = 10 V, ID = 7 A) RDS(on)2 = 11.3 mΩ TYP. (VGS = 4.5 V, ID = 7 A) RDS(on)3 = 12.9 mΩ TYP. (VGS = 4.0 V, ID = 7 A)
* Low Ciss: Ciss = 900 pF TYP.
* Small and surface mount package (P

Applications

* of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio

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UPA2781GR SWITCHING AND P-CHANNEL POWER MOS FET NEC

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