Part number:
UPA2780GR
Manufacturer:
NEC
File Size:
64.08 KB
Description:
Switching n- and p-channel power mos fet.
UPA2780GR Datasheet (64.08 KB)
* Built a Schottky Barrier Diode
* Low on-state resistance RDS(on)1 = 6.2 mΩ TYP. (VGS = 10 V, ID = 7 A) RDS(on)2 = 8.7 mΩ TYP. (VGS = 4.5 V, ID = 7 A) RDS(on)3 = 10.3 mΩ TYP. (VGS = 4.0 V, ID = 7 A)
* Low Ciss: Ciss = 1200 pF TYP.
* Small and surface mount package (P
UPA2780GR Datasheet (64.08 KB)
UPA2780GR
NEC
64.08 KB
Switching n- and p-channel power mos fet.
📁 Related Datasheet
UPA2781GR SWITCHING N- AND P-CHANNEL POWER MOS FET (NEC)
UPA2782GR SWITCHING N- AND P-CHANNEL POWER MOS FET (NEC)
UPA2700GR SWITCHING N- AND P-CHANNEL POWER MOS FET (NEC)
UPA2700TP SWITCHING N- AND P-CHANNEL POWER MOS FET (NEC)
UPA2701GR SWITCHING N- AND P-CHANNEL POWER MOS FET (NEC)
UPA2701TP SWITCHING N- AND P-CHANNEL POWER MOS FET (NEC)
UPA2702GR SWITCHING N- AND P-CHANNEL POWER MOS FET (NEC)
UPA2702TP SWITCHING N- AND P-CHANNEL POWER MOS FET (NEC)
UPA2706GR SWITCHING N- AND P-CHANNEL POWER MOS FET (NEC)
UPA2706TP SWITCHING N- AND P-CHANNEL POWER MOS FET (NEC)
