switching n- and p-channel power mos fet.
* Built a Schottky Barrier Diode
* Low on-state resistance RDS(on)1 = 11 mΩ TYP. (VGS = 10 V, ID = 5.5 A) RDS(on)2 = 16 mΩ TYP. (VGS = 4.5 V, ID = 5.5 A) RDS(on)3.
of an NEC Electronics product depend on its quality grade, as in.
The µPA2782GR is N-Channel Power MOSFET, which built a Schottky Barrier Diode inside. This product is designed for synchronous DC/DC converter application.
PACKAGE DRAWING (Unit: mm)
8 5 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8 ; Drain
FEATURES
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