UPD2118-2 Datasheet 16384 x 1 BIT DYNAMIC MOS RANDOM ACCESS MEMORY

Manufacturer: NEC (now Renesas Electronics)

Overview: NEe Microcomputers, Inc. 16384 x 1 BIT DYNAMIC MOS RANDOM ACCESS MEMORY NEe ,uPD2118 ,uPD2118-2 JI.

Download the UPD2118-2 datasheet PDF. This datasheet also includes the UPD2118 variant, as both parts are published together in a single manufacturer document.

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UPD2118-2 16384 x 1 bit dynamic mos random access memory by NEC (now Renesas Electronics) - Datasheet Preview

Datasheet Details

Part number	UPD2118-2
Manufacturer	NEC (now Renesas Electronics)
File Size	520.52 KB
Description	16384 x 1 BIT DYNAMIC MOS RANDOM ACCESS MEMORY
Download	UPD2118-2 Download (PDF)

Key Features

Single+5VSupply,±10%Tolerance.
Low Power: 138 mW Max Operating 16 mW Max Standby.
Low VDD Current Transients.
All Inputs, Including Clocks, TTL Compatible.
Non.
Latched Output is Three.
State.
RAS.
Only.
Refresh.
128 Refresh Cycles Required.
Page Mode Capability.
CAS Controlled Output Allows Hidden Refresh PIN IlPD2118 IlPD2118.
2 IlPD2118.
3 ACCESS TIME 150 ns 120 ns 100 r1'S RIW CYC.

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