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DATA SHEET
MOS INTEGRATED CIRCUIT
µPD44164082, 44164182, 44164362
18M-BIT DDRII SRAM 2-WORD BURST OPERATION
Description
The µPD44164082 is a 2,097,152-word by 8-bit, the µPD44164182 is a 1,048,576-word by 18-bit and the
µPD44164362 is a 524,288-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS
technology using full CMOS six-transistor memory cell. The µPD44164082, µPD44164182 and µPD44164362 integrates unique synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (K and /K) are latched on the positive edge of K and /K. These products are suitable for application which require synchronous operation, high speed, low voltage, high density and wide bit configuration.