BURST Datasheet | Specifications & PDF Download

GN25L95 2.5 Gbps CMOS Burst Mode Laser Driver & Limiting Post Amplifier with On-Chip Digital Diagnostic Monitoring Main Features • 100 mA bias curre

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GS88018/32/36AT-250/225/200/166/150/133 100-Pin TQFP Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline

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CY7C1423KV18/CY7C1424KV18 36-Mbit DDR II SIO SRAM Two-Word Burst Architecture 36-Mbit DDR II SIO SRAM Two-Word Burst Architecture Features ■ 36-Mbit

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72-Mbit QDR® II+ SRAM Four-Word Burst Architecture with RadStop™ Technology Radiation Performance Radiation Data ■ Total Dose =300 Krad ■ Soft error

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CY7C2163KV18/CY7C2165KV18 18-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT 18-Mbit QDR® II+ SRAM Four-Word Burst

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CY7C1248KV18/CY7C1250KV18 36-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency) 36-Mbit DDR II+ SRAM Two-Word Burst Architecture

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CY7C1548KV18/CY7C1550KV18 72-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency) 72-Mbit DDR II+ SRAM Two-Word Burst Architecture

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CY7C1668KV18 CY7C1670KV18 144-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) 144-Mbit DDR II+ SRAM Two-Word Burst Architectur

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GS832272C-225M 209-Pin BGA Military Temp 512K x 72 36Mb S/DCD Sync Burst SRAMs 225 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Features • Military T

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GS816218/36D(B/D)-400/375/333/250/200/150 119 & 165 BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36 18Mb S/DCD Sync Burst SRAMs 400 MHz–150

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IS61DDP2B22M18A/A1/A2 IS61DDP2B21M36A/A1/A2 2Mx18, 1Mx36 36Mb DDR-IIP (Burst 2) CIO SYNCHRONOUS SRAM (2.0 Cycle Read Latency) ADVANCED INFORMATION JU

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M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit (4Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 1.6

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M58LW032A 32 Mbit (2Mb x16, Uniform Block, Burst) 3V Supply Flash Memory FEATURES SUMMARY s WIDE x16 DATA BUS for HIGH BANDWIDTH s Figure 1. Packages

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M58MR016C M58MR016D 16 Mbit (1Mb x16, Mux I/O, Dual Bank, Burst) 1.8V Supply Flash Memory PRELIMINARY DATA s SUPPLY VOLTAGE – VDD = VDDQ = 1.7V to 2.

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M58WR128ET M58WR128EB 128 Mbit (8Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 1.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MCM63P631A/D Product Preview MCM63P631A 64K x 32 Bit Pipelined BurstRAM Synchronous

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MCM63P733A/D Advance Information MCM63P733A 128K x 32 Bit Pipelined BurstRAM Synchro

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MCM63P736/D Product Preview 128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronou

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