M58MR016D - 16 Mbit 1Mb x16 / Mux I/O / Dual Bank / Burst 1.8V Supply Flash Memory
The M58MR016 is a 16 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-byWord basis using a 1.7V to 2.0V V DD supply for the circuitry.
For Program and Erase operations the necessary high voltages are generated internally.
The device sup
M58MR016C M58MR016D 16 Mbit (1Mb x16, Mux I/O, Dual Bank, Burst) 1.8V Supply Flash Memory PRELIMINARY DATA s SUPPLY VOLTAGE VDD = VDDQ = 1.7V to 2.0V for Program, Erase and Read s s VPP = 12V for fast Program (optional) MULTIPLEXED ADDRESS/DATA SYNCHRONOUS / ASYNCHRONOUS READ Burst mode Read: 40MHz Page mode Read (4 Words Page) Random Access: 100ns FBGA TFBGA48 (ZC) 10 x 4 ball array s PROGRAMMING TIME 10µs by Word typical
M58MR016D Features
* asymmetrically blocked architecture. M58MR016 has an array of 71 blocks and is divided into two banks A and B, providing Dual Bank operations. While programming or erasing in Bank A, read operations are possible into Bank B or vice versa. Only one bank at the time is allowed to be in program or eras
