M58MR064C 64 Mbit 4Mb x16 / Mux I/O / Dual Bank / Burst 1.8V Supply Flash Memory

ST Microelectronics

Description

M58MR064C M58MR064D 64 Mbit (4Mb x16, Mux I/O, Dual Bank, Burst) 1.8V Supply Flash Memory s SUPPLY VOLTAGE * VDD = VDDQ = 1.65V to 2.0V for P.
The M58MR064 is a 64 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-byWord basis usi.

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Datasheet Specifications

Part number: M58MR064C
Manufacturer: STMicroelectronics ↗
File Size: 399.66 KB
Datasheet: M58MR064C_STMicroelectronics.pdf
Description: 64 Mbit 4Mb x16 / Mux I/O / Dual Bank / Burst 1.8V Supply Flash Memory

Features

* asymmetrically blocked architecture. M58MR064 has an array of 135 blocks and is divided into two banks A and B, providing Dual Bank operations. While programming or erasing in Bank A, read operations are possible into Bank B or vice versa. Only one bank at the time is allowed to be in program or era

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M58MR064C Mbit 4Mb x16 Mux Dual Bank Burst 1.8V Supply Flash Memory ST Microelectronics

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