M58MR064D - 64 Mbit 4Mb x16 / Mux I/O / Dual Bank / Burst 1.8V Supply Flash Memory

ST Microelectronics

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Datasheet Details

Part number	M58MR064D
Manufacturer	STMicroelectronics
File Size	399.66 KB
Description	64 Mbit 4Mb x16 / Mux I/O / Dual Bank / Burst 1.8V Supply Flash Memory
Datasheet	M58MR064D_STMicroelectronics.pdf

M58MR064D Product details

Description

The M58MR064 is a 64 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-byWord basis using a 1.65V to 2.0V VDD supply for the circuitry.

Features

asymmetrically blocked architecture. M58MR064 has an array of 135 blocks and is divided into two banks A and B, providing Dual Bank operations. While programming or erasing in Bank A, read operations are possible into Bank B or vice versa. Only one bank at the time is allowed to be in program or erase mode. It is possible to perform burst reads that cross bank boundaries. The memory features an erase suspend allowing reading or programming in another block. Once suspended the erase can be resume.

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Other Datasheets by ST Microelectronics

M58MR064C - 64 Mbit 4Mb x16 / Mux I/O / Dual Bank / Burst 1.8V Supply Flash Memory
M58MR016C - 16 Mbit 1Mb x16 / Mux I/O / Dual Bank / Burst 1.8V Supply Flash Memory
M58MR016D - 16 Mbit 1Mb x16 / Mux I/O / Dual Bank / Burst 1.8V Supply Flash Memory
M58MR032C - 32 Mbit 2Mb x16 / Mux I/O / Dual Bank / Burst 1.8V Supply Flash Memory
M58MR032D - 32 Mbit 2Mb x16 / Mux I/O / Dual Bank / Burst 1.8V Supply Flash Memory
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Published: Apr 26, 2005 |