M58MR064D
399.66kb
64 mbit 4mb x16 / mux i/o / dual bank / burst 1.8v supply flash memory. The M58MR064 is a 64 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word
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📁 Related Datasheet
M58MR064C - 64 Mbit 4Mb x16 / Mux I/O / Dual Bank / Burst 1.8V Supply Flash Memory
(ST Microelectronics)
M58MR064C M58MR064D
64 Mbit (4Mb x16, Mux I/O, Dual Bank, Burst) 1.8V Supply Flash Memory
s
SUPPLY VOLTAGE – VDD = VDDQ = 1.65V to 2.0V for Program, .
M58MR016C - 16 Mbit 1Mb x16 / Mux I/O / Dual Bank / Burst 1.8V Supply Flash Memory
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M58MR016C M58MR016D
16 Mbit (1Mb x16, Mux I/O, Dual Bank, Burst) 1.8V Supply Flash Memory
PRELIMINARY DATA
s
SUPPLY VOLTAGE – VDD = VDDQ = 1.7V to 2..
M58MR016D - 16 Mbit 1Mb x16 / Mux I/O / Dual Bank / Burst 1.8V Supply Flash Memory
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M58MR016C M58MR016D
16 Mbit (1Mb x16, Mux I/O, Dual Bank, Burst) 1.8V Supply Flash Memory
PRELIMINARY DATA
s
SUPPLY VOLTAGE – VDD = VDDQ = 1.7V to 2..
M58MR032C - 32 Mbit 2Mb x16 / Mux I/O / Dual Bank / Burst 1.8V Supply Flash Memory
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M58MR032C M58MR032D
32 Mbit (2Mb x16, Mux I/O, Dual Bank, Burst) 1.8V Supply Flash Memory
PRELIMINARY DATA
s
SUPPLY VOLTAGE – VDD = VDDQ = 1.7V to 2..
M58MR032D - 32 Mbit 2Mb x16 / Mux I/O / Dual Bank / Burst 1.8V Supply Flash Memory
(ST Microelectronics)
M58MR032C M58MR032D
32 Mbit (2Mb x16, Mux I/O, Dual Bank, Burst) 1.8V Supply Flash Memory
PRELIMINARY DATA
s
SUPPLY VOLTAGE – VDD = VDDQ = 1.7V to 2..
M581 - DING-DONG DOOR BELL
(ETC)
MOSDESIGN SEMICONDUCTOR CORP.
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omponents 21201 Itasca Street Chatsworth # $
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