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M58MR016C 16 Mbit 1Mb x16 / Mux I/O / Dual Bank / Burst 1.8V Supply Flash Memory

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Description

M58MR016C M58MR016D 16 Mbit (1Mb x16, Mux I/O, Dual Bank, Burst) 1.8V Supply Flash Memory PRELIMINARY DATA s SUPPLY VOLTAGE * VDD = VDDQ = 1..
The M58MR016 is a 16 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-byWord basis usi.

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Features

* asymmetrically blocked architecture. M58MR016 has an array of 71 blocks and is divided into two banks A and B, providing Dual Bank operations. While programming or erasing in Bank A, read operations are possible into Bank B or vice versa. Only one bank at the time is allowed to be in program or eras

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