M58WR128ET

128 Mbit 8Mb x 16 / Multiple Bank / Burst 1.8V Supply Flash Memory

ST Microelectronics

M58WR128ET Features

* SUMMARY s SUPPLY VOLTAGE

* VDD = 1.65V to 2.2V for Program, Erase and Read

* VDDQ = 1.65V to 3.3V for I/O Buffers

* VPP = 12V for fast Program (optional) s Figure 1. Package SYNCHRONOUS / ASYNCHRONOUS READ

* Synchronous Burst Read mode: 54MHz

* Asynchronous/

M58WR128ET General Description

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Figure 2. Logic Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Table 1. Signal Names . . . . . . . . .

M58WR128ET Datasheet (1.09 MB)