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M58WR032EB

Flash Memory

M58WR032EB Features

* SUMMARY

* www.DataSheet4U.com

* SUPPLY VOLTAGE

* VDD = 1.65V to 2.2V for Program, Erase and Read

* VDDQ = 1.65V to 3.3V for I/O Buffers

* VPP = 12V for fast Program (optional) SYNCHRONOUS / ASYNCHRONOUS READ

M58WR032EB General Description

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Figure 2. Table 1. Figure 3. Table 2. Figure 4. Logic Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 .

M58WR032EB Datasheet (1.24 MB)

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TAGS

M58WR032EB Flash Memory ST Microelectronics

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