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M58WR064B Datasheet - STMicroelectronics

M58WR064B FLASH MEMORY

M58WR064B Features

* SUMMARY s SUPPLY VOLTAGE

* VDD = 1.65V to 2.2V for Program, Erase and Read

* VDDQ = 1.65V to 3.3V for I/O Buffers

* VPP = 12V for fast Program (optional) s Figure 1. Packages SYNCHRONOUS / ASYNCHRONOUS READ

* Synchronous Burst Read mode : 52MHz

* Asynchronou

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M58WR064B M58WR064B FLASH MEMORY STMicroelectronics

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