M58WR064KL Datasheet - ST Microelectronics

M58WR064KL Flash memories

M58WR064KL Features

* Supply voltage

* VDD = 1.7 V to 2 V for Program, Erase and Read

* VDDQ = 1.7 V to 2 V for I/O buffers

* VPP = 9 V for fast Program Multiplexed address/data Synchronous / Asynchronous Read

* Synchronous Burst Read mode: 86 MHz

* Random Access: 60 ns, 70

Datasheet Details

M58WR064KL

1.07 MB

Flash memories.

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TAGS

M58WR064KL Flash memories ST Microelectronics

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