M58WR064KU, M58WR032KU - Flash memories

ST Microelectronics

Datasheet Details

Part number	M58WR064KU, M58WR032KU
Manufacturer	STMicroelectronics
File Size	1.07 MB
Description	Flash memories
Datasheet	M58WR032KU_STMicroelectronics.pdf
Note	This datasheet PDF includes multiple part numbers: M58WR064KU, M58WR032KU. Please refer to the document for exact specifications by model.

. . . 17 Chip Enable (E)

Supply voltage.
VDD = 1.7 V to 2 V for Program, Erase and Read.
VDDQ = 1.7 V to 2 V for I/O buffers.
VPP = 9 V for fast Program Multiplexed address/data Synchronous / Asynchronous Read.
Synchronous Burst Read mode: 86 MHz.
Random Access: 60 ns, 70 ns Synchronous Burst Read Suspend Programming time.
10 µs by Word typical for Factory Program.
Double/Quadruple Word Program option.
Enhanced Factory Program options Memory.

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Published: Jun 21, 2007 |