M58WR064EB Datasheet - ST Microelectronics

64 Mbit 4Mb x 16 / Multiple Bank / Burst 1.8V Supply Flash Memory

* SUMMARY s SUPPLY VOLTAGE

* VDD = 1.65V to 2.2V for Program, Erase and Read

* VDDQ = 1.65V to 3.3V for I/O Buffers

* VPP = 12V for fast Program (optional) s Figure 1. Package SYNCHRONOUS / ASYNCHRONOUS READ

* Synchronous Burst Read mode: 54MHz

* Asynchronous/

M58WR064EB

1.08 MB

64 mbit 4mb x 16 / multiple bank / burst 1.8v supply flash memory.

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