M58WR064EB - 64 Mbit 4Mb x 16 / Multiple Bank / Burst 1.8V Supply Flash Memory
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6 Figure 2.
Logic Diagram .
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7 Table 1.
Signal Names .
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M58WR064EB Features
* SUMMARY s SUPPLY VOLTAGE
* VDD = 1.65V to 2.2V for Program, Erase and Read
* VDDQ = 1.65V to 3.3V for I/O Buffers
* VPP = 12V for fast Program (optional) s Figure 1. Package SYNCHRONOUS / ASYNCHRONOUS READ
* Synchronous Burst Read mode: 54MHz
* Asynchronous/
