M58WR064HT, M58WR064HB Datasheet - ST Microelectronics

M58WR064HT 1.8 V supply Flash memories

M58WR064HT Features

* Supply voltage

* VDD = 1.7 V to 2 V for program, erase and read

* VDDQ = 1.7 V to 2.24 V for I/O buffers

* VPP = 12 V for fast program (optional) Synchronous/asynchronous read

* Synchronous burst read mode: 66 MHz

* Asynchronous/synchronous page read mo

Datasheet Details

M58WR064HT, M58WR064HB

1.06 MB

1.8 v supply flash memories.

This datasheet PDF includes multiple part numbers: M58WR064HT, M58WR064HB.
Please refer to the document for exact specifications by model.

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TAGS

M58WR064HT Distributor