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M58WR016KL

Flash memories

M58WR016KL Features

* Supply voltage

* VDD = 1.7 V to 2 V for Program, Erase and Read

* VDDQ = 1.7 V to 2 V for I/O buffers

* VPP = 9 V for fast Program Multiplexed address/data Synchronous / Asynchronous Read

* Synchronous Burst Read mode: 86 MHz

* Random Access: 60 ns, 70

M58WR016KL General Description

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Signal descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 2.10 2.11 2.12 www.DataSheet4U.com Address inputs (ADQ0-AD.

M58WR016KL Datasheet (1.07 MB)

Preview of M58WR016KL PDF

Datasheet Details

Part number:

M58WR016KL

Manufacturer:

STMicroelectronics ↗

File Size:

1.07 MB

Description:

Flash memories.
M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit (x 16, Mux I/O, Multiple Bank, Burst) 1.8 V supply Flash memori.

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TAGS

M58WR016KL Flash memories ST Microelectronics

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