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UPD4481161 - (UPD4481161/1181/1321/1361) 8M-BIT ZEROSB SRAM

Description

The µPD4481161 is a 524,288-word by 16-bit, the µPD4481181 is a 524,288-word by 18-bit, the µPD4481321 is a 262,144-word by 32-bit and the µPD4481361 is a 262,144-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.

Features

  • Low voltage core supply : VDD = 3.3 ± 0.165 V (-A65, -A75, -A85, -A65Y, -A75Y, -A85Y) VDD = 2.5 ± 0.125 V (-C75, -C85, -C75Y, -C85Y).
  • Synchronous operation.
  • Operating temperature : TA = 0 to 70 °C (-A65, -A75, -A85, -C75, -C85) TA =.
  • 40 to +85 °C (-A65Y, -A75Y, -A85Y, -C75Y, -C85Y).
  • 100 percent bus utilization.
  • Internally self-timed write control.
  • Burst read / write : Interleaved burst and linear burst sequence.
  • Fully regist.

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Datasheet Details

Part number UPD4481161
Manufacturer NEC
File Size 326.24 KB
Description (UPD4481161/1181/1321/1361) 8M-BIT ZEROSB SRAM
Datasheet download datasheet UPD4481161 Datasheet
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DATA SHEET MOS INTEGRATED CIRCUIT µPD4481161, 4481181, 4481321, 4481361 8M-BIT ZEROSBTM SRAM FLOW THROUGH OPERATION Description The µPD4481161 is a 524,288-word by 16-bit, the µPD4481181 is a 524,288-word by 18-bit, the µPD4481321 is a 262,144-word by 32-bit and the µPD4481361 is a 262,144-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. The µPD4481161, µPD4481181, µPD4481321 and µPD4481361 are optimized to eliminate dead cycles for read to write, or write to read transitions. These ZEROSB static RAMs integrate unique synchronous peripheral circuitry, 2-bit burst counter and output buffer as well as SRAM core. All input registers are controlled by a positive edge of the single clock input (CLK).
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