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UPD4481161 Datasheet (UPD4481161/1181/1321/1361) 8M-BIT ZEROSB SRAM

Manufacturer: NEC (now Renesas Electronics)

Overview: DATA SHEET MOS INTEGRATED CIRCUIT µPD4481161, 4481181, 4481321, 4481361 8M-BIT ZEROSBTM SRAM FLOW THROUGH.

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General Description

The µPD4481161 is a 524,288-word by 16-bit, the µPD4481181 is a 524,288-word by 18-bit, the µPD4481321 is a 262,144-word by 32-bit and the µPD4481361 is a 262,144-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.

The µPD4481161, µPD4481181, µPD4481321 and µPD4481361 are optimized to eliminate dead cycles for read to write, or write to read transitions.

These ZEROSB static RAMs integrate unique synchronous peripheral circuitry, 2-bit burst counter and output buffer as well as SRAM core.

Key Features

  • Low voltage core supply : VDD = 3.3 ± 0.165 V (-A65, -A75, -A85, -A65Y, -A75Y, -A85Y) VDD = 2.5 ± 0.125 V (-C75, -C85, -C75Y, -C85Y).
  • Synchronous operation.
  • Operating temperature : TA = 0 to 70 °C (-A65, -A75, -A85, -C75, -C85) TA =.
  • 40 to +85 °C (-A65Y, -A75Y, -A85Y, -C75Y, -C85Y).
  • 100 percent bus utilization.
  • Internally self-timed write control.
  • Burst read / write : Interleaved burst and linear burst sequence.
  • Fully regist.

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More Datasheets from NEC (now Renesas Electronics)

Part Number Description
UPD4481162 (UPD4481162/1182/1322/1362) 8M-BIT ZEROSB SRAM
UPD4481181 (UPD4481161/1181/1321/1361) 8M-BIT ZEROSB SRAM
UPD4481182 (UPD4481162/1182/1322/1362) 8M-BIT ZEROSB SRAM
UPD4481321 (UPD4481161/1181/1321/1361) 8M-BIT ZEROSB SRAM
UPD4481322 (UPD4481162/1182/1322/1362) 8M-BIT ZEROSB SRAM
UPD4481361 (UPD4481161/1181/1321/1361) 8M-BIT ZEROSB SRAM
UPD4481362 (UPD4481162/1182/1322/1362) 8M-BIT ZEROSB SRAM
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