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UPD4481362, UPD4481162 (UPD4481162/1182/1322/1362) 8M-BIT ZEROSB SRAM

UPD4481362 Description

DATA SHEET MOS INTEGRATED CIRCUIT µPD4481162, 4481182, 4481322, 4481362 8M-BIT ZEROSBTM SRAM PIPELINED OPERATION .
The µPD4481162 is a 524,288-word by 16-bit, the µPD4481182 is a 524,288-word by 18-bit, the µPD4481322 is a 262,144-word by 32-bit and the µPD4481362.

UPD4481362 Features

* Low voltage core supply : VDD = 3.3 ± 0.165 V (-A44, -A50, -A60, -A75, -A44Y, -A50Y, -A60Y, -A75Y) VDD = 2.5 ± 0.125 V (-C60, -C75, -C60Y, -C75Y)
* Synchronous operation
* Operating temperature : TA = 0 to 70 °C (-A44, -A50, -A60, -A75, -C60, -C75) TA =
* 40 to +85 °

UPD4481362 Applications

* which require synchronous operation, high speed, low voltage, high density and wide bit configuration, such as buffer memory. ZZ has to be set LOW at the normal operation. When ZZ is set HIGH, the SRAM enters Power Down State (“Sleep”). In the “Sleep” state, the SRAM internal state is preserved. Whe

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This datasheet PDF includes multiple part numbers: UPD4481362, UPD4481162. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
UPD4481362, UPD4481162
Manufacturer
NEC
File Size
404.04 KB
Datasheet
UPD4481162_NEC.pdf
Description
(UPD4481162/1182/1322/1362) 8M-BIT ZEROSB SRAM
Note
This datasheet PDF includes multiple part numbers: UPD4481362, UPD4481162.
Please refer to the document for exact specifications by model.

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