NP80N055ELE
Description
These products are N-channel MOS Field Effect.
Key Features
- Channel temperature 175 degree rated
- Super low on-state resistance RDS(on)1 = 11 m Ω MAX. (VGS = 10 V, I D = 40 A) RDS(on)2 = 13 m Ω MAX. (VGS = 5 V, I D = 40 A)
- Low Ciss : Ciss = 2900 pF TYP
