S6R8008V1M sram equivalent, 8m async fast sram.
* Fast Access Time : 10, 15ns(Max)
* CMOS Low Power Dissipation
Standby (TTL) : 35mA (Max.) (CMOS) : 28mA (Max.)
Operating : 90mA (10ns, Max.) 70mA (15ns, Max.)
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where Product failure could result in loss of life or personal or physical harm, or any military or defense application,.
The S6R8016(V/C/W)1M and S6R8008(V/C/W))1M are a 8,388,608-bit high-speed Static Random Access Memory organized as 512K (1M) words by 16(8) bits. The S6R8016(V/C/ W)1M (S6R8008(V/C/W)1M) uses 16(8) common input and output lines and have an output ena.
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