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S7B163635M Datasheet 512kx36 & 1mx18 Flow-through Sram

Manufacturer: NETSOL

Overview: S7B163635M SS77BB116613863355MM S7B161835M 512Kx36 & 1Mx18 Flow-Through SRAM 512Kx36 & 1Mx18 Flow-Through SRAM 18Mb Sync. Flow-Through SRAM Specification NETSOL RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind. This document and all information discussed herein remain the sole and exclusive property of NETSOL. No license of any patent, copyright, mask work, trademark or any other intellectual property right is granted by one party to the other party under this document, by implication, estoppel or otherwise. For updates or additional information about Netsol products, please contact to netsol@netsol.co.kr Rev. 1.2 Mar. 2018 -1- S7B163635M S7B161835M 512Kx36 & 1Mx18 Flow-Through SRAM Document Title 512Kx36 & 1Mx18 Bit Flow-Through SRAM Revision History Rev. No. History 0.0 Initial Draft 1.0 Final spec release Insert Icc spec parameters 1.1 Correct Typo 1.2 Correct Typo Draft Date Feb. 2012 Jul. 2012 Remark Advanced Final Sep. 2012 Mar. 2018 Final Final Rev. 1.2 Mar.

Datasheet Details

Part number S7B163635M
Manufacturer NETSOL
File Size 490.50 KB
Description 512Kx36 & 1Mx18 Flow-Through SRAM
Datasheet S7B163635M-NETSOL.pdf

Key Features

  • VDD = 2.5V(2.3V ~ 2.7V) or 3.3V(3.1V ~ 3.5V) Power Supply.
  • VDDQ = 2.3V~2.7V I/O Power Supply (VDD=2.5V) or 2.3V~3.5V I/O Power Supply (VDD=3.3V).
  • Synchronous Operation.
  • Self-Timed Write Cycle.
  • On-Chip Address Counter and Control Registers.
  • Byte Writable Function.
  • Global Write Enable Controls a full bus-width write.
  • Power Down State via ZZ Signal.
  • LBO Pin allows a choice of either a interleaved burst or a lin- ear b.

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