S7B323635M Description
The S7B323635M and S7B321835M are 37,748,736-bit Synchronous Static Random Access Memory designed for high performance. It is organized as 1M(2M) words of 36(18) bits and integrates address and control registers, a 2-bit burst address counter and added some new functions for high performance applications; Write cycles are internally self-timed and synchronous.
S7B323635M Key Features
- Synchronous Operation
- Self-Timed Write Cycle
- On-Chip Address Counter and Control Registers
- Byte Writable Function
- Global Write Enable Controls a full bus-width write
- Power Down State via ZZ Signal
- LBO Pin allows a choice of either a interleaved burst or a lin
- Three Chip Enables for simple depth expansion with No Data
- Asynchronous Output Enable Control
- ADSP, ADSC, ADV Burst Control Pins