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NSi6601M - Single-Channel Isolated Gate Driver

Description

6.1.

INSULATION AND SAFETY RELATED SPECIFICATIONS 14 6.2.

INSULATION SPECIFICATION PER DIN VDE V 0884-11:2017-01 FOR SOP8(150 MIL) PACKAGE 15 6.3.

Features

  • Isolated single-channel driver.
  • Miller Clamp options (NSI6601MB/MC/WC).
  • Input side supply voltage: 3.1V to 17V.
  • Driver side supply voltage: up to 32V with 9V, and 12V UVLO options.
  • 5A peak source and sink output current.
  • Minimum CMTI: ±150kV/μs.
  • 80ns typical propagation delay.
  • Operation ambient temperature: -40°C ~125°C.
  • RoHS & REACH compliant.
  • Lead-free component, suitable for lead-free soldering profile: 260 °C ,MSL3 Safety Regulatory Approval.

📥 Download Datasheet

Datasheet Details

Part number NSi6601M
Manufacturer NOVOSENSE
File Size 1.60 MB
Description Single-Channel Isolated Gate Driver
Datasheet download datasheet NSi6601M Datasheet

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Full PDF Text Transcription

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NSI6601M Single-Channel Isolated Gate Driver Datasheet (EN) 1.3 Product Overview The NSI6601M is a single-channel isolated gate driver designed to drive IGBTs, power MOSFETs and SiC MOSFETs in many applications. It provides split output that controls the rise and fall times individually. It can source and sink 5A peak current. The NSI6601M is available in SOP8 or SOW8 package, and can support 3000VRMS and 5700VRMS isolation per UL1577 respectively. System robustness is supported by 150kV/μs minimum common-mode transient immunity (CMTI). The driver operates with a maximum supply voltage of 32V, while the input-side accepts from 3.1V to 17V supply voltage. Under voltage lock-out (UVLO) protection is supported by all the power supply voltage pins.
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