NTE2349 transistors equivalent, silicon darlington transistors.
D High DC Current Gain:
hFE = 1000 (Min) @ IC = 25A hFE = 400 (Min) @ IC = 50A D Diode Protection to Rated IC D Monolithic Construction w/Built
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Features: D High DC Current Gain:
hFE = 1000 (Min) @ IC = 25A hFE = 400 (Min) @ IC = 50A D Diode Protection to Rated I.
The NTE2349 (NPN) and NTE2350 (PNP) are silicon complementary Darlington transistors in a TO3 type package designed for use as output devices in general purpose amplifier applications. Features: D High DC Current Gain:
hFE = 1000 (Min) @ IC = 25A h.
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