NTE253 transistors equivalent, silicon complementary transistors.
D High DC Current Gain: hFE = 2000 (Typ) @ IC = 2A D Monolithic Construction with Built
–In Base
–Emitter Resistors to Limit Leakage Multip.
Features: D High DC Current Gain: hFE = 2000 (Typ) @ IC = 2A D Monolithic Construction with Built
–In Ba.
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