NTE261 transistors equivalent, silicon complementary transistors.
D High DC Current Gain: hFE = 2500 Typ @ IC = 4A D Collector
–Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 100mA D Low Collector
–Emi.
Features: D High DC Current Gain: hFE = 2500 Typ @ IC = 4A D Collector
–Emitter Sustaining Voltage: VCEO.
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