NTE273
Description
The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type case designed for use in complementary amplifiers and driver applications.
Key Features
- High DC Current Gain: hFE = 25,000 (Min) @ IC = 200mA = 15,000 (Min) @ IC = 500mA
- Collector-Emitter Breakdown Voltage: V(BR)CES = 40V @ IC = 500mA
- Low Collector-Emitter Saturation Voltage: VCE(sat) = 1.5V @ IC = 1A
- Monolithic Construction for High Reliability Note
- NTE273 is a discontinued device and no longer available. Note
- Due to the monolithic construction of this device, breakdown voltages of both transistor ele- ments are identical. V(BR)CES is tested in lieu of V(BR)CEO in order to avoid errors caused by noise pickup. The voltage measured during the V(BR)CES test is the V(BR)CEO of the output transistor.
