NTE3045 phototransistor equivalent, optoisolator silicon npn darlington phototransistor.
D High Sensitivity to Low Input Drive Current D High Collector
–Emitter Breakdown Voltage: V(BR)CEO = 80V (Min) D High Input
–Output Isolat.
requiring electrical isolation, high breakdown voltage, and high current transfer ratios. Characterized for use as telep.
The NTE3045 is a gallium arsenide LED optically coupled to a Silicon Photo Darlington transistor in a 6
–Lead DIP type package designed for applications requiring electrical isolation, high breakdown voltage, and high current transfer.
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