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NTE343 - Silicon NPN Transistor

General Description

The NTE343 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications.

Key Features

  • D High Power Gain: Gpe ≥ 7.5dB (VCC = 13.5V, PO = 14W, f = 175MHz) D Ability to Withstand more than 20:1 VSWR Load when Operated at: VCC = 15.2V, PO = 18W, f = 175MHz.

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Datasheet Details

Part number NTE343
Manufacturer NTE Electronics (defunct)
File Size 21.94 KB
Description Silicon NPN Transistor
Datasheet download datasheet NTE343 Datasheet

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Other Datasheets by NTE Electronics (defunct)

Part Number Description
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NTE343 Silicon NPN Transistor RF Power Output (PO = 14W, 175MHz) Description: The NTE343 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 7.5dB (VCC = 13.5V, PO = 14W, f = 175MHz) D Ability to Withstand more than 20:1 VSWR Load when Operated at: VCC = 15.2V, PO = 18W, f = 175MHz Application: D 10 to 14 Watt Output Power Amplifiers in VHF Band Mobile Radio Applications Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V Collector–Emitter Voltage (RBE = ∞), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .