NTE343 Datasheet, Transistor, NTE

NTE343 Features

• Transistor D High Power Gain: Gpe ≥ 7.5dB (VCC = 13.5V, PO = 14W, f = 175MHz) D Ability to Withstand more than 20:1 VSWR Load when Operated at: VCC = 15.2V, PO = 18W, f = 175MHz Application: D 10

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NTE343

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NTE

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📄 Datasheet

Description:

Silicon npn transistor. The NTE343 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications.

NTE343 Application

• Applications Features: D High Power Gain: Gpe ≥ 7.5dB (VCC = 13.5V, PO = 14W, f = 175MHz) D Ability to Withstand more than 20:1 VSWR Load when Oper

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