NTE390 transistors equivalent, silicon complementary transistors.
D 10A Collector Current D Low Leakage Current: ICEO = 0.7mA @ VCE = 60V D Excellent DC Gain: hFE = 40 Typ @ 3A D High Current Gain Bandwidth Product: hfe = 3 Min @ IC = .
Features: D 10A Collector Current D Low Leakage Current: ICEO = 0.7mA @ VCE = 60V D Excellent DC Gain: hFE = 40 Typ @ 3.
The NTE390 (NPN) and NTE391 (PNP) are silicon compelementary transistors in a TO218 type package designed for general purpose power amplifier and switching applications. Features: D 10A Collector Current D Low Leakage Current: ICEO = 0.7mA @ VCE = 6.
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