NTE392 transistors equivalent, silicon complementary transistors.
D 25A Collector Current D Low Leakage Current: ICEO = 1mA @ VCE = 60V D Excellent DC Gain: hFE = 40 Typ @ 15A D High Current Gain Bandwidth Product: hfe = 3 Min @ IC = 1.
Features: D 25A Collector Current D Low Leakage Current: ICEO = 1mA @ VCE = 60V D Excellent DC Gain: hFE = 40 Typ @ 15A.
The NTE392 (NPN) and NTE393 (PNP) are silicon compelementary transistors in a TO218 type package designed for general purpose power amplifier and switching applications. Features: D 25A Collector Current D Low Leakage Current: ICEO = 1mA @ VCE = 60V.
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