NTE907 Datasheet | NTE Electronics

Description : The NTE907 consists of six ultra- fast, low capacitance diodes on a mon monolithic substrate. Five of the diodes are independently accessible, with the sixth sharing a mon terminal with the substrate. The NTE907 es in a 12- Lead TO5 type package. Features : D Excellent Reverse Recovery Time: 1ns typ. D Matched Monolithic Construction: VF matched within 5m V D Low Diode Capacitance: CD = 0.65p F typical at VR = - 2V Applications: D Balanced Modulators or Demodulators D Ring Modulators D High Speed Diode Gates D Analog Switches Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Power Dissipation, PD Any one diode unit - - - - - - - - - - - 100m W Total for device - - - - - - - - - - - . . . 600m W For TA > 55°C - - - - - - - - . . . . derate linearly 5.7m W/°C Operating Temperature Range, Topr - - - - - - - - - 55° to +125°C Storage Temperature Range, Tstg - - - - - - - - . . - 65° to +150°C Peak Inverse Voltage, PIV D1 - D5 - - - - - - - - - - - - - - 5V D6 - - -...