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NXP Semiconductors Electronic Components Datasheet

1PS184 Datasheet

High-speed double diode

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1PS184 pdf
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D114
1PS184
High-speed double diode
Product specification
Supersedes data of April 1996
1996 Sep 03


NXP Semiconductors Electronic Components Datasheet

1PS184 Datasheet

High-speed double diode

No Preview Available !

1PS184 pdf
Philips Semiconductors
High-speed double diode
Product specification
1PS184
FEATURES
Small plastic SMD package
High switching speed: max. 4 ns
Continuous reverse voltage:
max. 80 V
Repetitive peak reverse voltage:
max. 85 V
Repetitive peak forward current:
max. 500 mA.
APPLICATIONS
High-speed switching in e.g.
surface mounted circuits.
DESCRIPTION
The 1PS184 consists of two
high-speed switching diodes with
common cathodes, fabricated in
planar technology, and encapsulated
in the small plastic SMD SC59
package.
PINNING
PIN
1
2
3
DESCRIPTION
anode (a1)
anode (a2)
common cathode
21
21
3
3
Top view
MAM084
Marking code: B3T.
Fig.1 Simplified outline (SC59) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
Per diode
VRRM
VR
IF
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
IFRM repetitive peak forward current
IFSM non-repetitive peak forward current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
single diode loaded; see Fig.2;
note 1
double diode loaded; see Fig.2;
note 1
square wave; Tj = 25 °C prior to
surge
t = 1 µs
t=1s
Tamb = 25 °C; note 1
Note
1. Device mounted on an FR4 printed-circuit board.
MIN. MAX. UNIT
85 V
80 V
215 mA
125 mA
500 mA
4A
0.5 A
250 mW
65 +150 °C
150 °C
1996 Sep 03
2


Part Number 1PS184
Description High-speed double diode
Maker NXP
Total Page 6 Pages
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