NXP Semiconductors Electronic Components Datasheet

AFV10700HS Datasheet

RF Power LDMOS Transistors

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NXP Semiconductors

Technical Data

RF Power LDMOS Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

These RF power transistors are designed for pulse applications operating at

960 to 1215 MHz. These devices are suitable for use in defense and

commercial pulse applications with large duty cycles and long pulses, such as

IFF, secondary surveillance radars, ADS--B transponders, DME and other

complex pulse chains.

Typical Performance: In 1030–1090 MHz reference circuit, IDQ(A+B) = 100 mA

Frequency

(MHz) (1)

Signal Type

VDD

Pout

Gps

D

(V)

(W)

(dB)

(%)

1030

1090

1030

1090

Pulse

(128 sec,

10% Duty Cycle)

800 Peak

17.5

52.1

700 Peak

19.0

56.1

850 Peak

17.5

51.7

770 Peak

19.2

56.1

Typical Performance: In 960–1215 MHz reference circuit, IDQ(A+B) = 100 mA

Frequency

(MHz)

Signal Type

VDD

Pout

Gps

D

(V)

(W)

(dB)

(%)

960

1030

1090

1215

Pulse

(128 sec,

4% Duty Cycle)

747 Peak

16.7

50.8

713 Peak

16.5

49.7

700 Peak

16.5

47.1

704 Peak

16.5

54.5

Typical Performance: In 1030 MHz narrowband production test fixture,

IDQ(A+B) = 100 mA

Frequency

(MHz)

Signal Type

VDD

Pout

Gps

(V) (W) (dB)

1030 (2)

Pulse

(128 sec,

10% Duty Cycle)

730 Peak

19.2

D

(%)

58.5

Narrowband Load Mismatch/Ruggedness

Frequency

(MHz)

Signal Type

VSWR

Pin Test

(W) Voltage

1030 (2)

Pulse

(128 sec,

10% Duty Cycle)

> 20:1 at

All Phase

Angles

17.2 Peak

(3 dB

Overdrive)

1. Measured in 1030–1090 MHz reference circuit (page 5).

2. Measured in 1030 MHz narrowband production test fixture (page 9).

Result

No Device

Degradation

Features

 Internally input and output matched for broadband operation and ease of use

 Device can be used in a single--ended, push--pull or quadrature configuration

 Qualified up to a maximum of 55 VDD operation

 High ruggedness, handles > 20:1 VSWR

 Integrated ESD protection with greater negative gate--source voltage range

for improved Class C operation and gate voltage pulsing

 Recommended drivers: MRFE6VS25N (25 W) or MRF6V10010N (10 W)

 Included in NXP product longevity program with assured supply for a

minimum of 15 years after launch

Document Number: AFV10700H

Rev. 2, 08/2019

AFV10700H

AFV10700HS

AFV10700GS

960–1215 MHz, 700 W PEAK, 52 V

AIRFAST RF POWER LDMOS

TRANSISTORS

NI--780H--4L

AFV10700H

NI--780S--4L

AFV10700HS

NI--780GS--4L

AFV10700GS

Gate A 3

1 Drain A

Gate B 4

2 Drain B

(Top View)

Note: The backside of the package is the

source terminal for the transistor.

Figure 1. Pin Connections

 2017–2019 NXP B.V.

RF Device Data

NXP Semiconductors

AFV10700H AFV10700HS AFV10700GS

NXP Semiconductors Electronic Components Datasheet

AFV10700HS Datasheet

RF Power LDMOS Transistors

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Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

Gate--Source Voltage

Operating Voltage

Storage Temperature Range

Case Operating Temperature Range

Operating Junction Temperature Range (1,2)

Total Device Dissipation @ TC = 25C

Derate above 25C

VDSS

VGS

VDD

Tstg

–0.5, +105

–6.0, +10

55, +0

– 65 to +150

–55 to +150

–55 to +225

526

2.63

Vdc

C

W/C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value (2,3)

Unit

Thermal Impedance, Junction to Case

Pulse: Case Temperature 75C, 730 W Peak, 128 sec Pulse Width,

10% Duty Cycle, 50 Vdc, IDQ(A+B) = 100 mA, 1030 MHz

Table 3. ESD Protection Characteristics

ZJC

0.030

C/W

Test Methodology

Class

Human Body Model (per JESD22--A114)

2, passes 2000 V

Charge Device Model (per JESD22--C101)

C3, passes 2000 V

Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max Unit

Off Characteristics (4)

Gate--Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

Drain--Source Breakdown Voltage

(VGS = 0 Vdc, ID = 10 A)

Zero Gate Voltage Drain Leakage Current

(VDS = 50 Vdc, VGS = 0 Vdc)

Zero Gate Voltage Drain Leakage Current

(VDS = 105 Vdc, VGS = 0 Vdc)

IGSS

V(BR)DSS

IDSS

—

105

—

1 Adc

— Vdc

1 Adc

10 Adc

On Characteristics

Gate Threshold Voltage (4)

(VDS = 10 Vdc, ID = 260 Adc)

VGS(th)

1.3

1.8

2.3 Vdc

Gate Quiescent Voltage

VGS(Q)

1.6

2.1

2.6 Vdc

(VDD = 50 Vdc, IDQ(A+B) = 100 mAdc, Measured in Functional Test)

Drain--Source On--Voltage (4)

(VGS = 10 Vdc, ID = 2.6 Adc)

VDS(on)

—

0.28

—

Vdc

Dynamic Characteristics (4,5)

Reverse Transfer Capacitance

(VDS = 50 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Crss — 1.16 — pF

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.nxp.com.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.

4. Each side of device measured separately.

5. Part internally matched both on input and output.

(continued)

AFV10700H AFV10700HS AFV10700GS

RF Device Data

NXP Semiconductors

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AFV10700HS Datasheet

RF Power LDMOS Transistors

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RF Power LDMOS Transistors

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