* Internally input and output matched for broadband operation and ease of use
* Device can be used in a single
* ended, push
* pull or quadrature configuration
* Qualified up to a maximum of 55 VDD operation
* High ruggedness, handles > 20:1 VSWR
* Integrated ESD prot
AFV10700HS Datasheet (2.39 MB)
AFV10700HS
2.39 MB
Rf power ldmos transistors.
NXP Semiconductors Technical Data RF Power LDMOS Transistors N Channel Enhancement Mode Lateral MOSFETs These RF power transistors a.
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