Overview: NXP Semiconductors Technical Data RF Power LDMOS Transistors
N--Channel Enhancement--Mode Lateral MOSFETs These RF power transistors are designed for pulse applications operating at 960 to 1215 MHz. These devices are suitable for use in defense and
commercial pulse applications with large duty cycles and long pulses, such as
IFF, secondary surveillance radars, ADS--B transponders, DME and other complex pulse chains. Typical Performance: In 1030–1090 MHz reference circuit, IDQ(A+B) = 100 mA Frequency (MHz) (1) Signal Type VDD Pout Gps D (V) (W) (dB) (%) 1030 1090 1030 1090 Pulse (128 sec, 10% Duty Cycle) 50 800 Peak 17.5 52.1 700 Peak 19.0 56.1 52 850 Peak 17.5 51.7 770 Peak 19.2 56.1 Typical Performance: In 960–1215 MHz reference circuit, IDQ(A+B) = 100 mA Frequency (MHz) Signal Type VDD Pout Gps D (V) (W) (dB) (%) 960 1030 1090 1215 Pulse (128 sec, 4% Duty Cycle) 50 747 Peak 16.7 50.8 713 Peak 16.5 49.7 700 Peak 16.5 47.1 704 Peak 16.5 54.5 Typical Performance: In 1030 MHz narrowband production test fixture,
IDQ(A+B) = 100 mA Frequency (MHz) Signal Type VDD Pout Gps (V) (W) (dB) 1030 (2) Pulse (128 sec, 10% Duty Cycle) 50 730 Peak 19.2 D (%) 58.5 Narrowband Load Mismatch/Ruggedness Frequency (MHz) Signal Type VSWR Pin Test (W) Voltage 1030 (2) Pulse (128 sec, 10% Duty Cycle) > 20:1 at All Phase
Angles 17.2 Peak (3 dB
Overdrive) 50 1. Measured in 1030–1090 MHz reference circuit (page 5). 2. Measured in 1030 MHz narrowband production test fixture (page 9).
