AFV10700HS Datasheet | NXP Semiconductors

Features - Internally input and output matched for broadband operation and ease of use - Device can be used in a single--ended, push--pull or quadrature configuration - Qualified up to a maximum of 55 VDD operation - High ruggedness, handles > 20:1 VSWR - Integrated ESD protection with greater negative gate--source voltage range for improved Class C operation and gate voltage pulsing - Remended drivers: MRFE6VS25N (25 W) or MRF6V10010N (10 W) - Included in NXP product longevity program with assured supply for a minimum of 15 years after launch Document Number: AFV10700H Rev. 2, 08/2019 AFV10700H AFV10700HS AFV10700GS 960- 1215 MHz, 700 W PEAK, 52 V AIRFAST RF POWER LDMOS TRANSISTORS NI--780H--4L AFV10700H NI--780S--4L AFV10700HS NI--780GS--4L AFV10700GS Gate A 3 1 Drain A Gate B 4 2 Drain B (Top View) Note: The backside of the package is the source terminal for the transistor. Figure 1. Pin Connections  2017- 2019 NXP B.V. RF Device Data NXP Semiconductors AFV10700H AFV10700HS AFV10700GS 1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Range Operating Junction Temperature Range (1,2) Total Device Dissipation @ TC = 25C Derate above 25C VDSS VGS VDD Tstg TC TJ PD - 0.5, +105 - 6.0, +10 55, +0 - 65 to +150 - 55 to +150 - 55 to +225 526...