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BAT74S Datasheet

Dual Schottky barrier diode

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BAT74S
Dual Schottky barrier diode
22 November 2012
Product data sheet
1. Product profile
1.1 General description
Planar Schottky barrier dual diode with an integrated guard ring for stress protection.
Two electrically isolated Schootky barrier diodes encapsulated in a very small SOT363
(SC-88) Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
Low forward voltage
Low capacitance
AEC-Q101 qualified
1.3 Applications
Ultra high-speed switching
Line termination
Voltage clamping
Reverse polarity protection
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Per diode
IF forward current
VR reverse voltage
Per diode
VF forward voltage
IR reverse current
Conditions
IF = 100 mA; pulsed; tp = 300 µs;
δ = 0.02 ; Tamb = 25 °C
VR = 25 V; pulsed; tp = 300 µs;
δ = 0.02 ; Tamb = 25 °C
Min Typ Max Unit
- - 200 mA
- - 30 V
- - 800 mV
- - 2 µA
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NXP Semiconductors Electronic Components Datasheet

BAT74S Datasheet

Dual Schottky barrier diode

No Preview Available !

NXP Semiconductors
BAT74S
Dual Schottky barrier diode
2. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 A1 anode (diode 1)
2 n.c. not connected
3 K2 cathode (diode 2)
4 A2 anode (diode 2)
5 n.c. not connected
6 K1 cathode (diode 1)
Simplified outline
654
Graphic symbol
K1 A2
123
TSSOP6 (SOT363)
A1 K2
aaa-005709
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
BAT74S
TSSOP6
Description
plastic surface-mounted package; 6 leads
Version
SOT363
4. Marking
Table 4. Marking codes
Type number
BAT74S
Marking code
[1]
74%
[1] % = placeholder for manufacturing site code
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Per diode
VR reverse voltage
IF forward current
IFRM repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5
IFSM
non-repetitive peak forward
tp < 10 ms; Tj(init) = 25 °C
current
Ptot
total power dissipation
Tamb ≤ 25 °C
Tj junction temperature
BAT74S
Product data sheet
All information provided in this document is subject to legal disclaimers.
22 November 2012
Min Max Unit
- 30 V
- 200 mA
- 300 mA
- 600 mA
- 240 mW
- 125 °C
© NXP B.V. 2012. All rights reserved
2 / 10


Part Number BAT74S
Description Dual Schottky barrier diode
Maker NXP
Total Page 10 Pages
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