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BAT760 Datasheet

Medium power Schottky barrier single diode

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BAT760
Medium power Schottky barrier single diode
Rev. 03 — 17 October 2008
Product data sheet
1. Product profile
1.1 General description
Planar medium power Schottky barrier single diode with an integrated guard ring for
stress protection, encapsulated in a SOD323 (SC-76) very small Surface-Mounted
Device SMD plastic package.
1.2 Features
I Ultra high-speed switching
I Very low forward voltage
I Guard-ring protected
I Very small SMD plastic package
1.3 Applications
I Ultra high-speed switching
I Voltage clamping
I Protection circuits
1.4 Quick reference data
Table 1.
Symbol
VR
IF
VF
Quick reference data
Parameter
reverse voltage
forward current
forward voltage
[1] Pulse test: tp 300 µs; δ ≤ 0.02.
Conditions
IF = 1 A
Min Typ Max Unit
- - 20 V
- - 1A
[1] - 480 550 mV


NXP Semiconductors Electronic Components Datasheet

BAT760 Datasheet

Medium power Schottky barrier single diode

No Preview Available !

NXP Semiconductors
BAT760
Medium power Schottky barrier single diode
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1] The marking bar indicates the cathode.
3. Ordering information
Simplified outline
[1]
12
Graphic symbol
12
sym001
Table 3. Ordering information
Type number Package
Name
Description
BAT760
SC-76
plastic surface-mounted package; 2 leads
Version
SOD323
4. Marking
Table 4. Marking codes
Type number
BAT760
Marking code
A4
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VR reverse voltage
IF forward current
IFSM non-repetitive peak
forward current
tp = 8.3 ms;
half-sine wave;
JEDEC method
-
-
-
Tj
Tamb
Tstg
junction temperature
ambient temperature
storage temperature
-
65
65
Max Unit
20 V
1A
5A
125
+125
+150
°C
°C
°C
BAT760_3
Product data sheet
Rev. 03 — 17 October 2008
© NXP B.V. 2008. All rights reserved.
2 of 9


Part Number BAT760
Description Medium power Schottky barrier single diode
Maker NXP
Total Page 9 Pages
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