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BF1215 Key Features

  • Two low noise gain controlled amplifiers in a single package; one with full internal bias and one with partial internal
  • Superior cross modulation performance during AGC
  • High forward transfer admittance to input capacitance ratio
  • Suitable for VHF and UHF

Related NXP Semiconductors Datasheets

Part Number Description
BF1210 Dual N-channel dual gate MOSFET
BF1212 N-channel dual-gate MOS-FETs
BF1212R N-channel dual-gate MOS-FETs
BF1212WR N-channel dual-gate MOS-FETs
BF1216 Dual N-channel dual gate MOSFET

BF1215 Description

The BF1215 is a bination of two dual gate MOSFET amplifiers with shared source lead, shared gate2 lead and an integrated switch. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross modulation performance during AGC.