BF1212WR - N-channel dual-gate MOS-FETs

This page provides the datasheet information for the BF1212WR, a member of the BF1212 N-channel dual-gate MOS-FETs family.

Product Overview

NXP

Part number	BF1212WR
Manufacturer	NXP
File Size	174.17 KB
Description	N-channel dual-gate MOS-FETs
Datasheet	BF1212WR Datasheet
Additional preview pages of the BF1212WR datasheet.

Enhancement type N-channel field-effect transistor with source and substrate interconnected.

Integrated diodes between gates and source protect against excessive input voltage surges.

The BF1212, BF1212R and BF1212WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively.

Short channel transistor with high forward transfer admittance to input capacitance ratio.
Low noise gain controlled amplifier.
Excellent low frequency noise performance.
Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization.

Other Datasheets by NXP

Published: Aug 17, 2007 |