BF1212WR Datasheet | NXP Semiconductors

.. DISCRETE SEMICONDUCTORS DATA SHEET BF1212; BF1212R; BF1212WR N-channel dual-gate MOS-FETs Product specification 2003 Nov 14 .. Philips Semiconductors Product specification N-channel dual-gate MOS-FETs Features - Short channel transistor with high forward transfer admittance to input capacitance ratio - Low noise gain controlled amplifier - Excellent low frequency noise performance - Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization. APPLICATIONS - Gain controlled low noise VHF and UHF amplifiers for 5 V digital and analog television tuner applications. DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1212, BF1212R and BF1212WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively. BF1212; BF1212R; BF1212WR PINNING PIN 1 2 3 4 source drain gate 2 gate 1 DESCRIPTION handbook, 2 columns 4 1 Top view MSB014 BF1212; marking code: LGp Fig.1 Simplified outline (SOT143B). handbook, 2 columns 3 4 handbook, halfpage 2 Top view BF1212R; marking code: LKp 1 2 MSB035 MSB842 Top view BF1212WR; marking code: ML Fig.2 Simplified outline (SOT143R). Fig.3 Simplified outline (SOT343R). QUICK REFERENCE DATA SYMBOL VDS ID Ptot yfs Cig1-ss Crss F Xmod Tj PARAMETER drain-source voltage drain current total power dissipation forward transfer admittance input capacitance at gate 1 reverse transfer capacitance noise figure cross-modulation junction temperature 2 f = 1 MHz f = 800 MHz input level for k = 1 % at 40 d B AGC CONDITIONS - -...