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BF1212WR - N-channel dual-gate MOS-FETs

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NXP

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BF1212WR N-channel dual-gate MOS-FETs by NXP - Datasheet Preview — Datasheet preview – BF1212WR

Datasheet Details

Part number	BF1212WR
Manufacturer	NXP
File Size	174.17 KB
Description	N-channel dual-gate MOS-FETs
Datasheet	BF1212WR Datasheet
Note	This datasheet PDF includes multiple part numbers: BF1212WR, BF1212. Please refer to the document for exact specifications by model.
Additional preview pages of the BF1212WR datasheet.

Product details

Description

Enhancement type N-channel field-effect transistor with source and substrate interconnected.

Features

Short channel transistor with high forward transfer admittance to input capacitance ratio.
Low noise gain controlled amplifier.
Excellent low frequency noise performance.
Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization.

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Other Datasheets by NXP

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Published: Aug 17, 2007 |