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BF1212R - N-channel dual-gate MOS-FETs

Download the BF1212R datasheet PDF. This datasheet also covers the BF1212 variant, as both devices belong to the same n-channel dual-gate mos-fets family and are provided as variant models within a single manufacturer datasheet.

General Description

Enhancement type N-channel field-effect transistor with source and substrate interconnected.

Integrated diodes between gates and source protect against excessive input voltage surges.

The BF1212, BF1212R and BF1212WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively.

Key Features

  • Short channel transistor with high forward transfer admittance to input capacitance ratio.
  • Low noise gain controlled amplifier.
  • Excellent low frequency noise performance.
  • Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BF1212_PhilipsSemiconductors.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
BF1211 N-channel dual-gate MOS-FETs Philips
BF1211R N-channel dual-gate MOS-FETs Philips
BF1211WR N-channel dual-gate MOS-FETs Philips
BF1214 Dual N-channel dual gate MOSFET NXP Semiconductors
BF1207 Dual N-channel dual gate MOSFET NXP Semiconductors

Other Datasheets by NXP Semiconductors

Part Number Description
BF1212 N-channel dual-gate MOS-FETs
BF1212WR N-channel dual-gate MOS-FETs
BF1210 Dual N-channel dual gate MOSFET
BF1215 Dual N-channel dual gate MOSFET
BF1216 Dual N-channel dual gate MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET BF1212; BF1212R; BF1212WR N-channel dual-gate MOS-FETs Product specification 2003 Nov 14 www.DataSheet4U.com Philips Semiconductors Product specification N-channel dual-gate MOS-FETs FEATURES • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier • Excellent low frequency noise performance • Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization. APPLICATIONS • Gain controlled low noise VHF and UHF amplifiers for 5 V digital and analog television tuner applications. DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected.