BF1210 Datasheet | NXP Semiconductors

Dual N-channel dual gate MOSFET Rev. 01 - 25 October 2006 Product data sheet 1. Product profile CAUTION 1.1 General description The BF1210 is a bination of two dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross modulation performance during AGC. Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor has a SOT363 micro-miniature plastic package. This device is sensitive to Electro Static Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I Two low noise gain controlled amplifiers in a single package; both with a partly integrated bias I Superior cross modulation performance during AGC I High forward transfer admittance I High forward transfer admittance to input capacitance ratio 1.3 Applications I Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply voltage N digital and analog television tuners N professional munication equipment NXP Semiconductors Dual N-channel dual gate MOSFET 1.4 Quick reference data Table 1. Quick reference data Per MOSFET unless otherwise specified. Symbol Parameter Conditions VDS ID Ptot |yfs| Ciss(G1) drain-source voltage drain current total power dissipation forward transfer admittance input capacitance at gate1 DC Tsp ≤ 107 °C amplifier A; ID = 19 m A amplifier B; ID = 13 m A f = 100 MHz amplifier A amplifier B Crss reverse transfer capacitance f = 100 MHz NF noise figure amplifier A; f = 400 MHz amplifier B; f = 800 MHz Xmod cross modulation input level for k = 1 % at 40 d B AGC amplifier A amplifier B Tj junction temperature [1] Tsp is the temperature at the soldering point of the source lead. [2] Calculated from S-parameters. Min Typ Max...