BF1215 Datasheet | NXP Semiconductors

.. Dual N-channel dual gate MOSFET Rev. 01 - 6 May 2010 Product data sheet 1. Product profile 1.1 General description The BF1215 is a bination of two dual gate MOSFET amplifiers with shared source lead, shared gate2 lead and an integrated switch. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross modulation performance during AGC. Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor is availiable as a SOT363 micro-miniature plastic package. CAUTION This device is sensitive to Electro Static Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits - Two low noise gain controlled amplifiers in a single package; one with full internal bias and one with partial internal bias - Superior cross modulation performance during AGC - High forward transfer admittance to input capacitance ratio - Suitable for VHF and UHF applications: both amplifiers are optimized for VHF applications. - Internal switch reduces external ponents 1.3 Applications - Gain controlled low noise amplifiers for VHF and UHF applications with a 5 V supply ‹ Digital and analog television tuners ‹ Professional munication equipment .. NXP Semiconductors Dual N-channel dual gate MOSFET 1.4 Quick reference data Table 1. VDS ID Ptot |yfs| Ciss(G1) Crss NF Xmod Quick reference data for amplifier A and B Conditions DC DC Tsp ≤ 107 °C f = 100 MHz; Tj = 25 °C; ID = 19 m A f = 100 MHz f = 400 MHz; YS = YS(opt) f = 800 MHz; YS = YS(opt) cross modulation input level for k = 1 % at 40 d B AGC; fw = 50 MHz; funw = 60 MHz [3] [2] [2] [1] Symbol Parameter drain-source voltage drain current total power dissipation forward transfer admittance input capacitance at gate1 noise figure Min 23 105 Typ 27 2.5 27 1.5 1.9 107 Max 6 30 180 38 - Unit V m A m W m S p F f F d B d B d BμV reverse transfer...