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BF1218 Datasheet

Manufacturer: NXP Semiconductors
BF1218 datasheet preview

Datasheet Details

Part number BF1218
Datasheet BF1218_PhilipsSemiconductors.pdf
File Size 716.55 KB
Manufacturer NXP Semiconductors
Description Dual N-channel dual gate MOSFET
BF1218 page 2 BF1218 page 3

BF1218 Overview

The BF1218 is a bination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The integrated switch is operated by the gate1 bias of amplifier B. The source and substrate are interconnected.

BF1218 Key Features

  • Two low noise gain controlled amplifiers in a single package. One with a fully integrated bias and one with a partly int
  • Internal switch to save external ponents
  • Superior cross modulation performance during AGC
  • High forward transfer admittance
  • High forward transfer admittance to input capacitance ratio

BF1218 Applications

  • Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply voltage  digital and analog television tuners  professional munication equip
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Part Number Description
BF1210 Dual N-channel dual gate MOSFET
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BF1212WR N-channel dual-gate MOS-FETs
BF1215 Dual N-channel dual gate MOSFET
BF1216 Dual N-channel dual gate MOSFET
BF1201 N-channel dual-gate PoLo MOS-FETs
BF1201R N-channel dual-gate PoLo MOS-FETs
BF1201WR N-channel dual-gate PoLo MOS-FETs
BF1202 N-channel dual-gate PoLo MOS-FETs

BF1218 Distributor

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