BF370 Datasheet | NXP Semiconductors

FEATURES - Low current (max. 100 m A) - Low voltage (max. 15 V). APPLICATIONS - IF pre-amplifiers of television receivers. DESCRIPTION NPN medium frequency transistor in a TO-92; SOT54 plastic package. 1 handbook, halfpage PINNING PIN 1 2 3 emitter base collector DESCRIPTION 2 3 MAM370 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector - - - - - - - 65 - - 65 MIN. MAX. 40 15 4.5 100 200 500 +150 150 +150 V V V m A m A m W °C °C °C UNIT 1999 Apr 21 Philips Semiconductors Product specification NPN medium frequency transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO h FE Cc Ce Cre f T PARAMETER collector cut-off current emitter cut-off current DC current gain collector capacitance emitter capacitance feedback capacitance transition frequency CONDITIONS IE = 0; VCB = 20 V IE = 0; VCB = 20 V; Tj = 125 °C IC = 0; VEB = 2 V IC = 10 m A; VCE = 1 V IE = ie = 0; VCB = 10 V; f = 1 MHz IC = ic = 0; VEB = 1 V; f = 1 MHz IC = 0; VCB = 10 V; f = 1 MHz VCE = 10 V; f = 100 MHz IC = 10 m A IC = 40 m A 500 490 - - - - MIN. - - - 40 - - - TYP. - - - - 2.2 - 1.6 PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 250 UNIT K/W MAX. 400 30 100 - - 4.5 - UNIT n A µA n A p F p F p F MHz MHz 1999 Apr 21 Philips Semiconductors Product...