BF908WR mos-fet equivalent, n-channel dual-gate mos-fet.
* High forward transfer admittance
* Short channel transistor with high forward transfer admittance to input capacitance ratio
* Low noise gain controlled amp.
* VHF and UHF applications with 12 V supply voltage, such as television tuners and professional communications equip.
Depletion type field effect transistor in a plastic microminiature SOT343R package. The transistor is protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. CAUTION The device is supplied in an an.
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