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BF908 - Dual-gate MOS-FETs

Description

Depletion type field-effect transistor in a plastic microminiature SOT143 or SOT143R package.

The transistors are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source.

The device is supplied in an antistatic package.

Features

  • High forward transfer admittance.
  • Short channel transistor with high forward transfer admittance to input capacitance ratio.
  • Low noise gain controlled amplifier up to 1 GHz.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET BF908; BF908R Dual-gate MOS-FETs Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30 Philips Semiconductors Dual-gate MOS-FETs Product specification BF908; BF908R FEATURES • High forward transfer admittance • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz. APPLICATIONS • VHF and UHF applications with 12 V supply voltage, such as television tuners and professional communications equipment. handbook, halfpage 4 3 1 Top view 2 g2 g1 MAM039 d s,b DESCRIPTION Depletion type field-effect transistor in a plastic microminiature SOT143 or SOT143R package.
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