Description
The BF9028DNT is a dual N-channel MOS Field Effect Transistor, which is applied to electronic systems as a power switch.
Features
- .
- Can be driven by a 2.3 V power source.
- Low on-state resistance
RDS(on) = 16.0mΩ TYP(VGS = 4.5V, ID = 3.0A) RDS(on) = 17.5mΩ TYP(VGS = 3.8V, ID = 3.0A) RDS(on) = 22.0mΩ TYP(VGS = 2.5V, ID = 3.0A).
- Built-in G-S protection diode against ESD.
- Lead Pb-free and Halogen-free
14
Absolute Maximum Ratings(TC = 25℃)
Symbol VDS ID IDM VGS PD
TJ,Tstg TL
Parameter Drain-Source Voltage Drain Current(continuous)at Tc=25℃ Drain Current (pulsed) Gate-Source Voltage Po.
BF9028DNT-BYD.pdf
