BF9024SPD-M - P-Channel MOSFET and Schottky Diode

BYD

Datasheet Details

Part number	BF9024SPD-M
Manufacturer	BYD
File Size	364.90 KB
Description	P-Channel MOSFET and Schottky Diode
Datasheet	BF9024SPD-M_BYD.pdf

The BF9024SPD-M uses advanced trench technology to Provide excellent RDS (ON) and low gate charge.

MOSFET z z z VDS (V) = -20V ID = -2.7A Low on-state resistance RDS (on) < 90mΩ . (VGS = -4.5V) RDS (on) < 120mΩ . (VGS = -2.5V) VF=0.42V K D 1 2 3 4 1,2 Anode; 3 Source; 4 Gate 5,6 Drain; 7,8 Kathode K: Kathode;D: Drain Schottky Diode z Absolute Maximum Ratings (Ta = 25℃) Parameter Mosfet Drain to Source Voltage (MOSFET and Schottky) Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Maximun Power Dissipation Channel Temperature Storage Temperature Schottky Diode Reverse Volta.

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Published: Nov 25, 2010 |