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BYD

BF9024SPD-M Datasheet Preview

BF9024SPD-M Datasheet

P-Channel MOSFET and Schottky Diode

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BF9024SPD-M
BYD Microelectronics Co., Ltd
P-Channel MOSFET and Schottky Diode
General Description
The BF9024SPD-M uses advanced trench technology to
Provide excellent RDS (ON) and low gate charge.
This device is suitable for used as a load switch or in
PWM applications.
Features
MOSFET
z VDS (V) = -20V
z ID = -2.7A
z Low on-state resistance
RDS (on) < 90mΩ . (VGS = -4.5V)
RDS (on) < 120mΩ .(VGS = -2.5V)
Schottky Diode
z VF=0.42V
Absolute Maximum Ratings (Ta = 25)
876 5
KD
12 34
1,2 Anode; 3 Source; 4 Gate
5,6 Drain; 7,8 Kathode
K: Kathode;D: Drain
Parameter
Mosfet
Drain to Source Voltage
(MOSFET and Schottky)
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Maximun Power Dissipationa
Channel Temperature
Storage Temperature
Schottky Diode
Reverse Voltage
Average Forward Current
Pulsed Forward Current
Maximun Power Dissipationa
Storage Temperature
Symbol Ratings Unit
VDSS
VGSS
ID(DC)
ID(pulse)
PD
Tch
Tstg
-20 V
±8
-2.7
-10
1.1
150
-55~+150
V
A
A
W
VKA 20 V
IF 1 A
IFM 7 A
PD 0.96 W
Tstg -55~+150
Note a. Mounted on FR4 Board of 1”x1”.
Caution: These values must not be exceeded under any conditions.
Ordering Information
z BF9024SPD-M
z DFNWB3*1.8-8L
Datasheet
ES-BYD-WDZCE03D-070 Rev.A/1
Page 1of 6
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BYD

BF9024SPD-M Datasheet Preview

BF9024SPD-M Datasheet

P-Channel MOSFET and Schottky Diode

No Preview Available !

BYD Microelectronics Co., Ltd.
BF9024SPD-M
Electrical Characteristics (TC = 25)
Characteristic
Mosfet
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Threshold Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Schottky Diode
Forward Voltage Drop
Maximum Reverse Leakage Current
Junction Capacitance
Symbol
IDSS
IGSS
VGS(th)
|yfs|
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
VF
Irm
CT
Test Conditions
Min.
VDS= -20V,VGS=0V
VGS= ± 8V,VDS=0V
VDS=VGS,ID= - 0.25mA
VDS= -10V, ID= -2A
VGS= -4.5V,ID= -2A
VGS= -2.5V,ID= -2A
-0.45
VDS= -10V ,VGS =0,f=1MHZ
VDS= -10V,
ID= -1A,
VGS= -4.5V,
RG=6
VDS= -10V,
VGS= -4.5V,
ID= -2A
IF=-0.9A,VGS=0V
IF=0.5A
Vr=20V
Vr=10V
Typ.
7
73
99
427
72
50
15
36
36
30
5
1.5
1
-0.8
0.42
0.002
35
Max. Unit
-1
±100
-1
90
120
-1.2
µA
nA
V
S
m
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
0.48
0.1
V
mA
pF
Typical characteristics (25unless noted)
MOSFET
Figure 1 Threshold Voltage vs. Temperature
V
1
th
(-V)
0.8
Figure 2 VDSS vs. Temperature
V
24
DSS
(-V)
23
0.6 22
0.4 21
0.2 20
0
-50 -10 30 70 110 Tj(15)0
19
-50 -10 30 70 110 TJ(150)
Datasheet
ES-BYD-WDZCE03D-070 Rev.A/1
Page 2of 6
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Part Number BF9024SPD-M
Description P-Channel MOSFET and Schottky Diode
Maker BYD
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